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HM6287HJP-35 - x1 SRAM x1的SRAM

HM6287HJP-35_2013564.PDF Datasheet


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CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
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From old datasheet system
http://
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C01 Memory>Fast SRAM>Asynchronous SRAM
4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
RENESAS[Renesas Electronics Corporation]
AS5C4009LLDG-100/XT AS5C4009LLDG-100/IT AS5C4009LL 512K*8 SRAM ultra Low power SRAM AVAILABLE AS MILITARY SPECIFICATION
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Renesas Technology / Hitachi Semiconductor
GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
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9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
   32K x 32 1M Synchronous Burst SRAM
GSI Technology, Inc.
GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
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64K x 32 / 2M Synchronous Burst SRAM
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GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
M48T08 M48T0807 M48T08Y M48T18 64Kb (8K x 8) TIMEKEEPER SRAM(64KTIMEKEEPER SRAM) 64Kb的(8K的8)计时器的SRAM4K的位计时器的SRAM
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STMicroelectronics N.V.
意法半导
CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
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2M X 8 DDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
 
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